MJD122/127, NJVMJD122/127 دیتاشیت

مشخصات دیتاشیت

دانلود دیتاشیت MJD122/127, NJVMJD122/127	دانلود دیتاشیت

MJD127G 9 pages

RoHS: true
Category: Triode/MOS Tube/Transistor/Darlington Transistors
Datasheet: onsemi NJVMJD127T4G
Transistor Type: PNP
Operating Temperature: -65°C~+150°C@(Tj)
Collector Current (Ic): 8A
Power Dissipation (Pd): 20W
Transition frequency (fT): -
DC current gain (hFE@Vce,Ic): 1000@4V,4A
Collector-emitter voltage (Vceo): 100V
Collector cut-off current (Icbo@Vcb): 10uA
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 4V@8A,80mA
Package: DPAK-3
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Power - Max: 20W
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: NJVMJD127
detail: Bipolar (BJT) Transistor PNP - Darlington 100V 8A 20W Surface Mount DPAK